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| Artikelnummer: | ESH3C R6G |
|---|---|
| Hersteller / Marke: | Taiwan Semiconductor |
| Teil der Beschreibung.: | DIODE GEN PURP 150V 3A DO214AB |
| Datenblätte: |
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| RoHs Status: | |
| Zahlungsmittel: | PayPal / Credit Card / T/T |
| Versandweg: | DHL / Fedex / TNT / UPS / EMS |
| Aktie: |
Ship From: Hong Kong
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| Produkteigenschaften | Eigenschaften |
|---|---|
| Spannung - Forward (Vf) (Max) @ If | 900 mV @ 3 A |
| Spannung - Sperr (Vr) (max) | 150 V |
| Technologie | Standard |
| Supplier Device-Gehäuse | DO-214AB (SMC) |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Serie | - |
| Rückwärts-Erholzeit (Trr) | 20 ns |
| Produkteigenschaften | Eigenschaften |
|---|---|
| Verpackung / Gehäuse | DO-214AB, SMC |
| Paket | Tape & Reel (TR) |
| Betriebstemperatur - Anschluss | -55°C ~ 175°C |
| Befestigungsart | Surface Mount |
| Strom - Sperrleckstrom @ Vr | 5 µA @ 150 V |
| Strom - Richt (Io) | 3A |
| Kapazität @ Vr, F | 45pF @ 4V, 1MHz |




DIODE GEN PURP 150V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 150V 3A DO214AB
DIODE GEN PURP 150V 3A DO214AB
DIODE GEN PURP 150V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 150V 3A DO214AB
DIODE GEN PURP 150V 3A DO214AB
DIODE GEN PURP 150V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 150V 3A DO214AB
DIODE GEN PURP 150V 3A DO214AB
DIODE GEN PURP 150V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 150V 3A DO214AB
DIODE GEN PURP 150V 3A DO214AB
DIODE GEN PURP 100V 3A DO214AB
DIODE GEN PURP 150V 3A DO214AB
DIODE GEN PURP 150V 3A DO214AB
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ESH3C R6GTaiwan Semiconductor Corporation |
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